Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such. Buy SOLID STATE 2N online at Newark element Buy your 2N from an Technical Datasheet: 2N Datasheet. See all Technical Docs. 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, Motorola, TMOS SWITCHING FET TRANSISTORS.
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Microchip 2N is available at Allchips. We have engaged in the electronic components industry over 10 years. Vds – Drain-Source Breakdown Voltage. We completely know the crux of the components supply chain. Sampling Options Buy Now. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
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All components original and new, traceable for sure. Analog Multiplexer Dual 4: Analog Multiplexer Single 4: Allchips offer a warranty of days for each component. Vgs – gate-source voltage. Free from secondary breakdown Low power drive requirement Dqtasheet of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain.
Welcome to your attention, too! Buy from the Microchip Store. The maximum working temperature.
Please contact sales office if device weight is not available. Inquiry Add to Cart. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. If comprehensive data for 2N to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
2N6660 MOSFET. Datasheet pdf. Equivalent
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Pd – Power Dissipation.
2N Datasheet pdf – TMOS SWITCHING FET TRANSISTORS – Motorola
Details Shipping Payment Method Guarantee. Id – continuous drain current. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
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